Samsung 4GB DDR3 1333 Mbps 2R x 8 Server Memory Module

Overview

The Samsung M392B5273CH0-CH9 is a 4 GB DDR3 Registered DIMM designed specifically for server environments that require reliable and error-checked memory. Operating at a data rate of 1333 Mbps, this module supports demanding workloads such as virtualization, database hosting, and file serving. Its dual-rank 2 R × 8 configuration and built-in ECC with 8-bit parity ensure data accuracy and system stability during continuous operation.

With a 240-pin form factor, it fits standard DDR3 server memory slots, making it easy to install whether you are upgrading capacity or replacing existing modules. The ability to operate at either 1.5 V or 1.35 V allows for flexible power management in various server setups, including dense blade chassis and rack-mounted systems.

Key features

• DDR3 Registered DIMM technology that provides stable and reliable memory performance for servers
• Dual-rank 2 R × 8 organization supports higher memory densities and improves overall system responsiveness
• Error-correcting code (ECC) with 8-bit parity helps maintain data integrity and reduces the risk of memory errors
• Operates at two voltage levels (1.5 V or 1.35 V) to balance power consumption and compatibility with existing hardware
• Onboard register reduces electrical load on the memory controller, enhancing performance in multi-socket server configurations
• 240-pin interface ensures compatibility with standard DDR3 server memory slots for straightforward installation

Key specs

• Capacity: 4 GB
• Memory type: DDR3 Registered DIMM
• Data rate: 1333 Mbps
• Rank: Dual-rank (2 R × 8)
• Error correction: ECC with 8-bit parity
• Voltage: 1.5 V or 1.35 V
• Pin count: 240-pin

Compatibility and use cases

This memory module is well suited for IT professionals managing servers that require dependable and error-checked memory, such as virtualization hosts, database servers, and file servers. It fits well in multi-socket rack-mounted systems and blade chassis where maintaining signal integrity and reducing electrical load on memory controllers is critical. Its flexible voltage operation makes it a practical choice for environments aiming to optimize power consumption without sacrificing performance.